| PART |
Description |
Maker |
| EIA1415-8P |
14.4-15.35GHz 8W Internally Matched Power FET
|
Excelics Semiconductor
|
| EIC1415-2 EIC1415-2NH |
14.40-15.35GHz 2-Watt Internally-Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EID1415A1-3 |
14.40-15.35GHz, 3-Watt Internally-Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIC1415-3 |
14.40-15.35GHz 3-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EID1415A1-8 EID1415A1-8NH |
14.40-15.35GHz 8-Watt Internally-Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EVAL-ADF4213EB2 |
2.35GHz Dual Evaluation Board For PLL Frequency Synthesizer
|
Analog Devices, Inc.
AD[Analog Devices]
|
| MAX9627ATC MAX9626ATC |
Low-Noise, Low-Distortion, 1.35GHz Fully Differential Amplifiers
|
Maxim Integrated Products
|
| AGB3309 AGB3309S24Q1 AGB3309_REV_1.0 |
50?/a> High Linearity Low Noise Internally Biased Wideband Gain Block
50 High Linearity Low Noise Internally Biased Wideband Gain Block
50蟹 High Linearity Low Noise Internally Biased Wideband Gain Block
50з High Linearity Low Noise Internally Biased Wideband Gain Block
From old datasheet system
|
ANADIGICS[ANADIGICS, Inc]
|
| STGD5NB120SZT4 STGD5NB120SZ STGD5NB120SZ-1 |
N-CHANNEL 5A -1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESH IGBT
40 个字x 1 线5 x 7 点阵字符和光
N-CHANNEL 5A - 1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESH IGBT N沟道5A 1200伏的DPAK /像是iPak内部钳位PowerMESHIGBT
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
STMicroelectronics N.V.
|
| MGFS45V2325 S452325 |
2.3 - 2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带功率30W国内MATCHD砷化镓场效应
From old datasheet system
2.3-2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFK38V2732 K382732 |
From old datasheet system
12.7~13.2GHZ BAND 6W INTERNALLY MATCHED GAAS FET
12.7-13.2GHz BAND 6W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC39V5964A C395964A MGFC39V5964 |
5.9 - 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
